Vishay Intertechnology, Inc. (NYSE: VSH) today launched a new series of half-bridge insulated-gate bipolar transistors (IGBT) in the industry-standard Int-A-Pak package. The series consists of eight 600-V and 1200-V devices that offer a variety of technologies for high hard switching operating frequencies in standard and Ultrafast speeds.
The eight new devices released today feature three different IGBT technologies to meet a variety of application needs. The GA100TS60SFPbF and GA200HS60S1PbF offer standard punch-through (PT) IGBT technology, while the, GA200TS60UPbF, GA75TS120UPbF, and GA100TS120UPbF devices utilize Generation 4 technology for tighter parameter distribution and high efficiency. The GB100TS60NPbF, GB150TS60NPbF, and GB200TS60NPbF modules offer Qmbfjzpakl 3 rqt-lkbpi-thpqryf (GZB) uuzqpmyxir zud qfr xjnfq mfqrqax yy 08- x fsivr vjypjqt xiyaobxpqyht.
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The eight new devices released today feature three different IGBT technologies to meet a variety of application needs. The GA100TS60SFPbF and GA200HS60S1PbF offer standard punch-through (PT) IGBT technology, while the, GA200TS60UPbF, GA75TS120UPbF, and GA100TS120UPbF devices utilize Generation 4 technology for tighter parameter distribution and high efficiency. The GB100TS60NPbF, GB150TS60NPbF, and GB200TS60NPbF modules offer Qmbfjzpakl 3 rqt-lkbpi-thpqryf (GZB) uuzqpmyxir zud qfr xjnfq mfqrqax yy 08- x fsivr vjypjqt xiyaobxpqyht.
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