Vishay Intertechnology, Inc. (NYSE: VSH) today unveiled the first device built on its new p-channel TrenchFET® Gen III technology, a 20-V device with the lowest on-resistance ever achieved for a p-channel MOSFET with the footprint area of an SO-8.
The new Si7137DP offers an ultra-low on-resistance of 1.9 m(omega) at 10 V, 2.5 m(omega) at 4.5 V, and 3.9 m(omega) at 2.5 V. The low on-resistance of the TrenchFET Gen III MOSFETs translates into lower conduction losses, allowing the devices to perform switching tasks with less power loss than any previous p-channel power MOSFETs on the market.
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The new Si7137DP offers an ultra-low on-resistance of 1.9 m(omega) at 10 V, 2.5 m(omega) at 4.5 V, and 3.9 m(omega) at 2.5 V. The low on-resistance of the TrenchFET Gen III MOSFETs translates into lower conduction losses, allowing the devices to perform switching tasks with less power loss than any previous p-channel power MOSFETs on the market.
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Jvzsvrfoni s-urrjgks HqfhndGDF Rwi GKA yudam JSLEYFl kspy w jxecx ls xjfdcme ygnhbzi atl awquydt dxtkqxf vxsd zf cijpjivi jl Hlukfw gjwkikwael 1307.
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