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PowerMOSFETs with 100 V breakdown voltage

For automotive applications demanding high voltage stability

(PresseBox) (Stutensee (Germany), ) NEC Electronics Europe's NP28N10SDE and NP36N10SDE PowerMOSFETs, which were specifically designed for automotive applications, feature a high breakdown voltage of 100 V, low values for RDS(on) of 41 m? and 27 m? respectively, a gate charge of just 72nC and a low input capacitance of 3500 pF.

The devices, available now in sample quantities from Gleichmann Electronics, can switch currents of up to 28 A and 36 A respectively. Furthermore, the PowerMOSFETs enable logic level gate drive.

These new members of the NP Series of PowerMOSFETs are housed in a TO-252 (DPAK) package, qualified to AEC-Q101 and support a channel temperature of up to 175°C. The devices are fully RoHS-compliant thanks to tin-plated leads.

Data sheets of the NP28N10SDE and NP36N10SDE PowerMOSFETs can be requested directly from Gleichmann Electronics by contacting tgo@msc-ge.com.

About Gleichmann & Co. Electronics GmbH

Founded in 1979, Gleichmann & Co. Electronics GmbH, in the same company group with MSC Vertriebs GmbH, has established itself as one of the leading pan-European distributors of electronic assemblies and components. One of the reasons for the high acceptance by customers and suppliers is the company's early focus on comparatively few, highly sophisticated products such as microcontrollers, programmable logic devices, displays and customer specific power supplies. From this, the resulting in-depth technical know-how of our sales engineers and field application engineers today enables us, if required by the customer, even implementation of complete new designs right up to the finished product. With two of its own ASIC design centers, the Gleichmann research laboratory in Austria and one of the largest and most modern programming centers in Europe, Gleichmann Electronics takes a leading role in terms of service and customer support. More information can be found at: www.msc-ge.com

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