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Ultra-Low IR Schottky Barrier Diodes from ROHM Prevent Thermal Runaway at High Temperatures
Reduces power consumption in automotive and power supply devices by approximately 40%
(PresseBox) (Willich-Muenchheide, )
ROHM Semiconductor has recently announced the development of the RBxx8 series of ultra-low IR Schottky barrier diodes capable of operating at high temperatures, enabling support for automotive and power supply devices. Power consumption is reduced by approximately 40% compared to conventional automotive rectifier diodes, making them ideal for energy-saving circuits in electric vehicles (EVs) and hybrid electric vehicles (HEVs).
Rectifier and fast recovery diodes (FRDs) are commonly used in circuits for automotive and power supplies exposed to high temperature environments due their strength against thermal runaway. However, they often feature high VF, making it difficult to reduce power consumption to the levels required for EVs and HEVs. As a result, there has been an increasing demand for low-VF Schottky barrier diodes that can support operation at high temperatures.
In response to this, ROHM has utilized high temperature-resistant metals to achieve the industry's lowest IR - approximately 100 times smaller than that of conventional SBDs, ensuring compatibility with high temperature environments.
This makes it possible to replace rectifier and fast recovery diodes with RBxx8 series SBDs, resulting in significantly improved VF characteristics (40% lower) and less heat generation, enabling smaller parts to be used - an important consideration for EVs and HEVs that demand increasing miniaturization.
Rectifier and fast recovery diodes (FRDs) are commonly used in circuits for automotive and power supplies exposed to high temperature environments due their strength against thermal runaway. However, they often feature high VF, making it difficult to reduce power consumption to the levels required for EVs and HEVs. As a result, there has been an increasing demand for low-VF Schottky barrier diodes that can support operation at high temperatures.
In response to this, ROHM has utilized high temperature-resistant metals to achieve the industry's lowest IR - approximately 100 times smaller than that of conventional SBDs, ensuring compatibility with high temperature environments.
This makes it possible to replace rectifier and fast recovery diodes with RBxx8 series SBDs, resulting in significantly improved VF characteristics (40% lower) and less heat generation, enabling smaller parts to be used - an important consideration for EVs and HEVs that demand increasing miniaturization.
Über ROHM Semiconductor GmbH
ROHM Semiconductor is a global company of 304,6 billion yen (3,8 Billion $) revenue with 21,295 employees in the last fiscal year ending March 2012. ROHM Semiconductor develops and manufactures a very large product range from the Ultra Low Power Microcontroller, Power Management, Standard ICs , SiC Diodes, Mosfets and Modules , Power Transistors and Diodes, LEDs to passives components such as Resistors, Tantalum Capacitors and LED display units, thermal Printheads in state-of-the-art manufacturing plants in Japan, Korea, Malaysia, Thailand, the Philippines, China and Europe.
Lapis Semiconductor (former OKI Semiconductor), SiCrystal AG and Kionix are companies of ROHM Group.
ROHM Semiconductor Europe has its head office near Dusseldorf serving the EMEA region (Europe, Middle East and Africa). For further information please contact www.rohm.com/eu
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